SIE818DF - Brand New VAHSY Field Effect Tube (MOSFET)
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Description
The SIE818DF is an electronic component model for a field effect tube (MOSFET). It is an n-channel vertical DMOS with optimized electrical characteristics. The subcircuit model is extracted and optimized for temperature ranges between -55°C and 125°C. It provides accurate performance under a pulsed 0-V to 4.5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Specifications and features
- N-Channel Vertical DMOS
- Macro Model (Subcircuit Model)
- Level 3 MOS
- Applicable for both linear and switching applications
- Accurate over the -55 to 125°C temperature range
- Models the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
Application Scenarios
The SIE818DF can be used in various electronic applications, including linear and switching applications. Its accurate performance over a wide temperature range makes it suitable for a range of environments and conditions.
Comparison
Advantages- Accurate performance over a wide temperature range
- Models the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
Disadvantages- None mentioned
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
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- - EMS: 10-15 business days
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Popular parts of the same kind
- Datasheet: Download SIE818DF
- Chipdatas Part: CD94-SIE818DF
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 00:07 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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