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Product Details
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The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Features
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 58ns at TJ = 125oC
• Low Conduction Loss -
Similar parts: 719 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Shipping option:
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Additional Information
- Datasheet: Download HGT1N30N60A4D
- Chipdatas Part: CD89-HGT1N30N60A4D
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 21:01 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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