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MUN5333DW1T1G - Brand New onsemi Arrays, Pre-Biased BJTs - Datasheet - Chipdatas

MUN5333DW1T1G - Brand New onsemi Arrays, Pre-Biased BJTs

In Stock:107205 ,Ready for Immediate Shipping
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In Stock: 107205, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD93-MUN5333DW1T1G
Manufacturer Part No.:MUN5333DW1T1G
Datecode:09+
Package:6-TSSOP, SC-88, SOT-363
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  • Dual Bias Resistor Transistors

    NPN and PNP Silicon Surface Mount
    Transistors with Monolithic Bias Resistor Network

    The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.

    Features

    • Simplifies Circuit Design
    • Reduces Board Space
    • Reduces Component Count
    • Available in 8 mm, 7 inch/3000 Unit Tape and Reel
    • Pb−Free Packages are Available

  • Similar parts: 1115 , Click to view
    Attributes Value
    Category Arrays, Pre-Biased BJTs
    Manufacturer onsemi
    Product Category Arrays, Pre-Biased BJTs
    Series MUN5333DW1
    Packaging Alternate Packaging
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Mounting-Type Surface Mount
    Supplier-Device-Package SC-88/SC70-6/SOT-363
    Configuration Dual
    Power-Max 250mW
    Transistor-Type 1 NPN, 1 PNP - Pre-Biased (Dual)
    Electric current collectors 100mA
    Voltage-Collector-Emitter-Breakdown-Max 50V
    Resistor-Base-R1-Ohms 4.7k
    Resistor-Emitter-Base-R2-Ohms 47k
    DC-Current-Gain-hFE-Min-Ic-Vce 80 @ 5mA, 10V
    Vce saturation 250mV @ 1mA, 10mA
    Current-Collector-Cutoff-Max 500nA
    Frequency-Transition -
    Pd-Power-Dissipation 187 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Collector-Emitter-Voltage-VCEO-Max 50 V
    Transistor-Polarity NPN PNP
    Continuous-Collector-Current 0.1 A
    DC-Collector-Base-Gain-hfe-Min 80 at 5 mA at 10 V
    Typical-Input-Resistor 4.7 kOhms
    Typical-Resistor-Ratio 0.1
    Peak-DC-Collector-Current 100 mA
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Additional Information
  • Datasheet: Download MUN5333DW1T1G
  • Chipdatas Part: CD93-MUN5333DW1T1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 15:48 +0800
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    • Full or Partial Refund , If the item is not as described
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