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IPW65R190CFD - Brand New Infineon Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IPW65R190CFD - Brand New Infineon Field Effect Tube (MOSFET)

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Brand:Infineon
Chipdatas Part No.:CD86-IPW65R190CFD
Manufacturer Part No.:IPW65R190CFD
Datecode:09+
Package:TO-247-3
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  • Description

    The IPW65R190CFD is a field-effect tube (MOSFET) belonging to the 650V CoolMOS™ CFD2 series, which is designed using superjunction (SJ) technology. Developed by Infineon Technologies, a leading manufacturer of SJ MOSFETs, this electronic component model is designed to provide high voltage power MOSFETs with revolutionary technology.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Technology: Superjunction (SJ)
    • Maximum Operating Temperature: 150°C
    • Maximum Drain-Source Voltage (Vdss): 650V
    • Continuous Drain Current (Id): 23A
    • Gate-Source Voltage (Vgs): ± 20V
    • Package Type: TO-247

    Application Scenarios

    The IPW65R190CFD MOSFET is ideal for use in resonant switching PWM stages required for many applications, including lighting, PC Silverbox, telecom, server, and LCT TV.

    Comparison

    Advantages
    • The high voltage MOSFET provides a very low internal resistance (Rds(on)), reducing power loss and heat buildup during operation.
    • This model has been developed using superjunction (SJ) principle, which enables it with great efficiency and electromagnetic compatibility (EMC) characteristics.
    • The components of the model have been designed to achieve a high level of reliability, making them suitable for use in various industries.
    Disadvantages
    • This MOSFET may not be suitable for use in applications that require a drain current of more than 23A continuously.
    • The IPW65R190CFD is limited to a maximum operating temperature of only 150°C.
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer INFINEON
    Product Category FETs - Single
    Series CoolMOS CFD2
    Packaging Tube
    Part-Aliases IPW65R190CFDFKSA1 IPW65R190CFDXK SP000905376
    Unit-Weight 1.340411 oz
    Mounting-Style Through Hole
    Tradename CoolMOS
    Package-Case TO-247-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 151 W
    Fall-Time 6.4 ns
    Rise-Time 8.4 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 17.5 A
    Vds-Drain-Source-Breakdown-Voltage 650 V
    Vgs-th-Gate-Source-Threshold-Voltage 4 V
    Rds-On-Drain-Source-Resistance 190 mOhms
    Transistor-Polarity N-Channel
    Qg-Gate-Charge 68 nC
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Additional Information
  • Datasheet: Download IPW65R190CFD
  • Chipdatas Part: CD86-IPW65R190CFD
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 20:52 +0800
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    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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