Description

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

Specifications and features

- Product Category: IC Chips
- Open NAND Flash Interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Page size x8: 2112 bytes (2048 + 64 bytes)
- Page size x16: 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2 planes x 2048 blocks per plane
- Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks, 16Gb: 16,384 blocks
- Asynchronous I/O performance
- tRC/tWC: 20ns (3.3V), 25ns (1.8V)
- Array performance
- Read page: 25µs
- Program page: 200µs (TYP: 1.8V, 3.3V)
- Erase block: 700µs (TYP)
- Command set: ONFI NAND Flash Protocol
- Advanced command set
- Program page cache mode
- Read page cache mode
- One-time programmable (OTP) mode
- Two-plane commands
- Interleaved die (LUN) operations
- Read unique ID
- Block lock (1.8V only)
- Internal data move
- Operation status byte provides software method for detecting operation completion, pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: Write protect entire device
- First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management
- Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand_Init) after power up (contact factory)
- Internal data move operations supported within the plane from which data is read
- Quality and reliability
- Data retention: 10 years
- Endurance: 100,000 PROGRAM/ERASE cycles
- Operating voltage range: VCC: 2.7–3.6V, VCC: 1.7–1.95V
- Operating temperature: Commercial: 0°C to +70°C, Industrial (IT): –40ºC to +85ºC
- Package: 48-pin TSOP type 1, CPL2, 63-ball VFBGA

Application Scenarios

This electronic component model (MT29C1G12MACPAJC-75) can be used in various applications that require high-performance I/O operations and reliable data storage. Some common scenarios include:

• Server storage systems
• Embedded systems
• Consumer electronics
• Automotive electronics
• Industrial equipment
• Telecommunications

Comparison

This model has several advantages and disadvantages:

• High performance
• Standard pinout for easy upgrades
• Low pin-count design
• Supports ONFI 1.0-compliant interface
• Reliable data retention and endurance
• Wide operating voltage range

• Requires additional hardware signals for write protection and status monitoring
• Internal ECC feature requires additional configuration
• Limited block size and device size
• Special commands and initialization methods may be required