HGTG12N60A4D - Brand New onsemi IGBTs - Single
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Description
The HGTG12N60A4D is a MOS gated high voltage switching device that combines the advantages of MOSFETs and bipolar transistors. It has a high input impedance like a MOSFET and a low on-state conduction loss like a bipolar transistor. The on-state voltage drop only varies moderately between 25oC and 150oC. This IGBT is ideal for high voltage switching applications that require low conduction losses, especially in high frequency switch mode power supplies.
Specifications and features
• >100kHz Operation: 390V, 12A
• 200kHz Operation: 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time: 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ ModelApplication Scenarios
This IGBT can be used in various high voltage switching applications, especially in high frequency switch mode power supplies.
Comparison
Advantages- The HGTG12N60A4D combines the advantages of MOSFETs and bipolar transistors.
Disadvantages- The on-state voltage drop varies moderately with temperature.
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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Popular parts of the same kind
- Datasheet: Download HGTG12N60A4D
- Chipdatas Part: CD92-HGTG12N60A4D
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/01 20:29 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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