CDC421A100RGET - Brand New Texas Instruments Clock Generators / Frequency Synthesizers / PLL
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Description
The CDC421A100RGET is a clock generator/frequency synthesizer/PLL electronic component. It features two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the component functions as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel between SRAM and EEPROM. The CDC421A100RGET is a fast static RAM (25, 35, 45 ns) with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from SRAM to EEPROM occur automatically upon power down using charge stored in an external 100 µF capacitor.
Specifications and features
- High-performance CMOS nonvolatile static RAM
- 32768 x 8 bits
- 25, 35 and 45 ns Access Times
- 10, 15 and 20 ns Output Enable Access Times
- ICC = 15 mA typ. at 200 ns Cycle Time
- Automatic STORE to EEPROM on Power Down using external capacitor
- Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
- Automatic STORE Timing
- 105 STORE cycles to EEPROM
- 10 years data retention in EEPROM
- Automatic RECALL on Power Up
- Software RECALL Initiation (RECALL Cycle Time < 20 µs)
- Unlimited RECALL cycles from EEPROM
- Single 5 V ± 10 % Operation
- Operating temperature ranges: 0 to 70 °C, -40 to 85 °C, -40/-55 to 125 °C (only 35 ns)
- QS 9000 Quality Standard
- ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
- Packages: SOP32 (300 mil), PDIP32 (600 mil, only C/K-Type)
Application Scenarios
The CDC421A100RGET can be used in various applications such as clock generators, frequency synthesizers, and PLL circuits. It is suitable for electronic devices that require fast and reliable static RAM with nonvolatile memory capabilities.
Comparison
Advantages- High-performance CMOS technology
- Fast access times
- Automatic data transfer between SRAM and EEPROM
- Unlimited read and write cycles for SRAM
- Long data retention in EEPROM
- Wide operating temperature ranges
Disadvantages- Requires an external capacitor for automatic data transfer
- Limited package options
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Similar parts: 9857 , Click to view
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Datasheet
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Popular parts of the same kind
- Datasheet: Download CDC421A100RGET
- Chipdatas Part: CD94-CDC421A100RGET
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- Last Updated: 2024/06/03 10:25 +0800
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