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FQA9N90C - Brand New onsemi Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FQA9N90C - Brand New onsemi Field Effect Tube (MOSFET)

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In Stock: 200000, Ready for Immediate Shipping
Brand:onsemi
Chipdatas Part No.:CD86-FQA9N90C
Manufacturer Part No.:FQA9N90C
Datecode:09+
Package:TO-247
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  • Description

    Introducing the FQA9N90C, an N-channel enhancement mode power field effect transistor that comes in a Field Effect Tube (MOSFET) product category. Developed using Fairchild’s planar stripe DMOS technology, this category of FET minimizes on-state resistance, offers superior switching performance, and can withstand high energy pulse in the avalanche and commutation mode. This MOSFET device is well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.

    Specifications and features

    • 9A, 900V, RDS(on)= 1.4Ω@VGS= 10 V
    • Low gate charge (typical 45 nC)
    • Low Crss (typical 14pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability

    Application Scenarios

    These FETs are well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.

    Comparison

    Advantages
    • Low gate charge allows for more efficient switching performance
    • Low Crss allows for reduced signal distortion
    • Faster switching capability allows for more rapid data transfer
    • Improved dv/dt capability reduces the risk of damage from voltage spikes
    Disadvantages
    • May not be suitable for specific power applications that require a different type of MOSFET device
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ON Semiconductor
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series QFET?
    Packaging Tube
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 900V
    Current-Continuous-Drain-Id-25°C 9A (Tc)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 10V
    Vgs-th-Max-Id 5V @ 250?A
    Gate-Charge-Qg-Max-Vgs 58nC @ 10V
    Vgs-Max ±30V
    Input-Capacitance-Ciss-Max-Vds 2730pF @ 25V
    FET-Feature -
    Power-Dissipation-Max 280W (Tc)
    Rds-On-Max-Id-Vgs 1.4 Ohm @ 4.5A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Through Hole
    Supplier-Device-Package TO-3P
    Package-Case TO-3P-3, SC-65-3
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Additional Information
  • Datasheet: Download FQA9N90C
  • Chipdatas Part: CD86-FQA9N90C
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/20 19:23 +0800
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