FQA9N90C - Brand New onsemi Field Effect Tube (MOSFET)
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Description
Introducing the FQA9N90C, an N-channel enhancement mode power field effect transistor that comes in a Field Effect Tube (MOSFET) product category. Developed using Fairchild’s planar stripe DMOS technology, this category of FET minimizes on-state resistance, offers superior switching performance, and can withstand high energy pulse in the avalanche and commutation mode. This MOSFET device is well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
Specifications and features
- 9A, 900V, RDS(on)= 1.4Ω@VGS= 10 V
- Low gate charge (typical 45 nC)
- Low Crss (typical 14pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application Scenarios
These FETs are well-suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
Comparison
Advantages- Low gate charge allows for more efficient switching performance
- Low Crss allows for reduced signal distortion
- Faster switching capability allows for more rapid data transfer
- Improved dv/dt capability reduces the risk of damage from voltage spikes
Disadvantages- May not be suitable for specific power applications that require a different type of MOSFET device
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Similar parts: 25937 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download FQA9N90C
- Chipdatas Part: CD86-FQA9N90C
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/20 19:23 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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