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FDD6670AS - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET) - Datasheet - Chipdatas

FDD6670AS - Brand New Fairchild Semiconductor Field Effect Tube (MOSFET)

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In Stock: 8582, Ready for Immediate Shipping
Chipdatas Part No.:CD86-FDD6670AS
Manufacturer Part No.:FDD6670AS
Datecode:09+
Package:TO-252-3, DPak 2 Leads + Tab, SC-63
$0.12703 /PCS Each contains 0 PCS
≥1:
$0.12703
≥10:
$0.12575
≥50:
$0.12448
≥100:
$0.12067
Numbers (PCS) :
  • Description

    The FDD6670AS is a field effect tube (MOSFET) that is designed to replace a single MOSFET and Schottky diode in synchronous DC-DC power supplies. The 30V MOSFET provides a low RDS(ON) and low gate charge, ensuring that it maximizes power conversion efficiency. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Maximum Drain Current (ID): 76 A
    • Maximum Drain-to-Source Voltage (VDS): 30 V
    • Maximum Gate-to-Source Voltage (VGS): ±20 V
    • Maximum Power Dissipation (PD): 130 W
    • RDS(ON)max= 8.0 mΩ@ VGS= 10 V
    • RDS(ON)max= 10.4 mΩ@ VGS= 4.5 V
    • Includes SyncFET Schottky body diode
    • Low gate charge (29nC typical)
    • High performance trench technology for extremely low RDS(ON)
    • High power and current handling capability

    Application Scenarios

    • DC/DC converter
    • Low-side notebook

    Comparison

    Advantages
    • Low RDS(ON)
    • Low gate charge
    • Includes SyncFET Schottky body diode
    • High performance trench technology for extremely low RDS(ON)
    • High power and current handling capability
    Disadvantages
    • Designed to replace a single MOSFET and Schottky diode in synchronous DC-DC power supplies, limiting its versatility for other applications
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer ON Semiconductor
    Product Category FETs - Single
    Categories Transistors - FETs, MOSFETs - Single
    Series PowerTrench?
    Packaging Cut Tape (CT)
    Part-Status Obsolete
    FET-Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain-to-Source-Voltage-Vdss 30V
    Current-Continuous-Drain-Id-25°C 76A (Ta)
    Drive-Voltage-Max-Rds-On-Min-Rds-On 4.5V, 10V
    Vgs-th-Max-Id 3V @ 1mA
    Gate-Charge-Qg-Max-Vgs 40nC @ 10V
    Vgs-Max ±20V
    Input-Capacitance-Ciss-Max-Vds 1580pF @ 15V
    FET-Feature -
    Power-Dissipation-Max 70W (Ta)
    Rds-On-Max-Id-Vgs 8 mOhm @ 13.8A, 10V
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Supplier-Device-Package TO-252
    Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download FDD6670AS
  • Chipdatas Part: CD86-FDD6670AS
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 12:12 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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