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Description
Electronic Component Model: RJP30H1DPD is an IC chip that utilizes trench gate and thin wafer technology (G6H-II series). It is designed for high speed switching with a typical response time of 80ns (tr) and 150ns (tf). The collector to emitter saturation voltage is low at 1.5V (VCE(sat)), and it has a low leakage current with a maximum of 1μA (ICES).Specifications and features
- Trench gate and thin wafer technology (G6H-II series) - High speed switching: tr = 80 ns typ., tf = 150 ns typ. - Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. - Low leak current: ICES = 1 μA max.Application Scenarios
This electronic component model can be used in various applications, such as: - Power supply systems - Switching circuits - Motor control systems - Power invertersComparison
This model offers several advantages and disadvantages:Advantages- High speed switching capability - Low collector to emitter saturation voltage - Low leakage currentDisadvantages- No specific disadvantages mentioned -
Similar parts: 3915 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Additional Information
- Datasheet: Download RJP30H1DPD
- Chipdatas Part: CD94-RJP30H1DPD
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/24 02:53 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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