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IXDN75N120 - Brand New IXYS IGBTs - Datasheet - Chipdatas

IXDN75N120 - Brand New IXYS IGBTs

In Stock:4393 ,Ready for Immediate Shipping
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In Stock: 4393, Ready for Immediate Shipping
Brand:IXYS
Category:IGBTs
Chipdatas Part No.:CD87-IXDN75N120
Manufacturer Part No.:IXDN75N120
Datecode:09+
Package:SOT-227-4, miniBLOC
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  • Description

    Electronic Component Model: IXDN75N120 is an IGBT (Insulated Gate Bipolar Transistor) that belongs to the product category IGBTs. It is designed with NPT (Non-Punch Through) IGBT technology, which ensures low saturation voltage and low switching losses. The square RBSOA (Reverse Bias Safe Operating Area) and the absence of latch-up make it reliable and efficient. It has a high short circuit capability and a positive temperature coefficient for easy paralleling. The MOS input allows for voltage control. It is packaged in the miniBLOC, a widely recognized international standard package.

    Specifications and features

    • NPT IGBT technology
    • Low saturation voltage
    • Low switching losses
    • Square RBSOA, no latch up
    • High short circuit capability
    • Positive temperature coefficient for easy paralleling
    • MOS input, voltage controlled
    • International standard package miniBLOC

    Application Scenarios

    Typical applications for IXDN75N120 IGBT include AC motor speed control, DC servo and robot drives, DC choppers, Uninterruptible power supplies (UPS), and Switch-mode and resonant-mode power supplies.

    Comparison

    Advantages
    • Space savings
    • Easy to mount with 2 screws
    • High power density
    Disadvantages

    No specific disadvantages have been mentioned for this IGBT model.

  • Similar parts: 719 , Click to view
    Attributes Value
    Category IGBTs
    Manufacturer IXYS
    Product Category IGBT Modules
    Series IXDN75N120
    Packaging Tube
    Unit-Weight 1.340411 oz
    Mounting-Style SMD/SMT
    Package-Case SOT-227-4, miniBLOC
    Mounting-Type Chassis Mount
    Supplier-Device-Package SOT-227B
    Input Standard
    Configuration Single
    Power-Max 660W
    Electric current collectors 150A
    Voltage-Collector-Emitter-Breakdown-Max 1200V
    Current-Collector-Cutoff-Max 4mA
    IGBT-Type NPT
    Vce-on-Max-Vge-Ic 2.7V @ 15V, 75A
    Input-Capacitance-Cies-Vce 5.5nF @ 25V
    NTC-Thermistor No
    Maximum Operating Temperature + 150 C
    Operating temperature range - 40 C
    Collector-Emitter-Voltage-VCEO-Max 1200 V
    Collector-Emitter-Saturation-Voltage 2.2 V
    Maximum-Gate-Emitter-Voltage +/- 20 V
    Continuous-Collector-Current-Ic-Max 150 A
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  • Shopping guide

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    • - 90-day warranty against any manufacturing defects. View more
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Contact us
Additional Information
  • Datasheet: Download IXDN75N120
  • Chipdatas Part: CD87-IXDN75N120
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/03 11:45 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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