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CSD16323Q3
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Product Details
Manufacturer
Texas Instruments
Product Category
FETs - Single
Series
NexFETâ„¢
Packaging
Alternate Packaging
Mounting-Style
SMD/SMT
Tradename
NexFET
Package-Case
8-PowerTDFN
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
8-VSON (3.3x3.3)
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
3W
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
25V
Input Capacitance
1300pF @ 12.5V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
21A (Ta), 60A (Tc)
Rds-On-Max-Id-Vgs
4.5 mOhm @ 24A, 8V
Vgs-th-Max-Id
1.4V @ 250μA
Gate-Charge-Qg-Vgs
8.4nC @ 4.5V
Pd-Power-Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
6.3 ns
Rise-Time
15 ns
Vgs-Gate-Source-Voltage
10 V
ID (drain current)
21 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.1 V
Rds-On-Drain-Source-Resistance
4.4 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
13 ns
Turn-On Delay Time
5.3 ns
Qg-Gate-Charge
6.2 nC
Channel-Mode
Enhancement
CSD16323Q3 - Brand New Texas Instruments Field Effect Tube (MOSFET)
Manufacturer Part No.:CSD16323Q3
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