IDH12SG60C - Brand New Infineon Diodes, Rectifiers - Single
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Description
Electronic Component Model: IDH12SG60C is a SiC Schottky Barrier diode that belongs to Infineon’s ThinQ!™ Generation 5 technology. It features improved efficiency over all load conditions, thanks to its improved thermal characteristics and a lower figure of merit (Qc x Vf). This diode is designed to complement the 650V CoolMOS™ families, ensuring it meets the most stringent application requirements in this voltage range.
Specifications and features
- Vbr at 650V
- Improved Figure of Merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
- 10 years manufacturing of SiC diodesApplication Scenarios
This diode is suitable for various applications including:
- Telecom/Server SMPS
- Solar/UPS
- PC Silverbox
- LED/LCD TV
- Motor Drives
- HID lightingComparison
Advantages- Higher safety margin against Overvoltage; best match with CoolMOS™ 650V products
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- High-quality know-how and capacity in SiC diode manufactureDisadvantagesNo specific disadvantages mentioned for this model.
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Similar parts: 6341 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download IDH12SG60C
- Chipdatas Part: CD94-IDH12SG60C
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/20 23:20 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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