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Product Details
Manufacturer
IXYS
Product Category
FETs - Single
Series
IXFH12N120
Packaging
Tube
Unit-Weight
0.229281 oz
Mounting-Style
Through Hole
Tradename
Polar HiPerFET
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
34 ns
Rise-Time
25 ns
Vgs-Gate-Source-Voltage
30 V
ID (drain current)
12 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Vgs-th-Gate-Source-Threshold-Voltage
6.5 V
Rds-On-Drain-Source-Resistance
1.35 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
62 ns
Turn-On Delay Time
34 ns
Qg-Gate-Charge
103 nC
Transconductance
5 S
Channel-Mode
Enhancement
IXFH12N120P - Brand New IXYS Field Effect Tube (MOSFET)
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Delivery:
Estimated between Wed, Feb 26 and Fri, Feb 28.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
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