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IXFH50N60P3 - Brand New IXYS Field Effect Tube (MOSFET) - Datasheet - Chipdatas

IXFH50N60P3 - Brand New IXYS Field Effect Tube (MOSFET)

In Stock:2400 ,Ready for Immediate Shipping
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In Stock: 2400, Ready for Immediate Shipping
Brand:IXYS
Chipdatas Part No.:CD86-IXFH50N60P3
Manufacturer Part No.:IXFH50N60P3
Datecode:09+
Package:TO-247-3
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  • Description

    IXFH50N60P3 is a Field Effect Tube (MOSFET) and a part of hIPerFET family of Power MOSFETs designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free-wheeling" rectifiers in a board range of power switching applications.

    Specifications and features

    • Product Category: Field Effect Tube (MOSFET)
    • Manufacturer: Infineon Technologies
    • Model: IXFH50N60P3
    • Configuration: Single
    • Voltage Rating: 600V
    • Current Rating: 50A
    • Rds On: 107mOhm
    • Gate Charge Qg Vgs: 216nC @ 10V
    • Vgs(th) Min/Max: 3V, 5V
    • Package Type: TO-247
    • Operating Temperature: -55°C ~ 150°C
    • Mounting Type: Through Hole

    Application Scenarios

    IXFH50N60P3 can be used in a broad range of power switching applications where superior dv/dt performance is required, such as DC-DC converters, motor drives, uninterruptible power supplies (UPS), welding equipment, plasma displays, medical equipment, among others.

    Comparison

    Advantages
    • High dv/dt performance
    • Eliminates the need for fast recovery "free-wheeling" rectifiers
    • Low Rds On
    • Large gate charge Qg Vgs
    • Wide operating temperature range
    Disadvantages
    • Not suitable for low voltage applications
    • May require additional heat sinking for high power applications
  • Similar parts: 25937 , Click to view
    Attributes Value
    Category Field Effect Tube (MOSFET)
    Manufacturer IXYS
    Product Category FETs - Single
    Series IXFH50N60
    Packaging Tube
    Unit-Weight 0.056438 oz
    Mounting-Style Through Hole
    Tradename HyperFET
    Package-Case TO-247-3
    Technology Si
    Number-of-Channels 1 Channel
    Configuration Single
    Transistor-Type 1 N-Channel
    Pd-Power-Dissipation 1040 W
    Fall-Time 17 ns
    Rise-Time 20 ns
    Vgs-Gate-Source-Voltage 30 V
    ID (drain current) 50 A
    Vds-Drain-Source-Breakdown-Voltage 600 V
    Vgs-th-Gate-Source-Threshold-Voltage 5 V
    Rds-On-Drain-Source-Resistance 145 mOhms
    Transistor-Polarity N-Channel
    Qg-Gate-Charge 94 nC
    Transconductance 55 S 32 S
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
    Within 30 days from date of shipment. View more

    Delivery period:
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    • - DHL Express: 3-7 business days
    • - DHL eCommerce: 12-22 business days
    • - FedEx International Priority: 3-7 business days
    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download IXFH50N60P3
  • Chipdatas Part: CD86-IXFH50N60P3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/06/13 16:22 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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