Description

The Electronic Component Model: 29F0418-1SR is a non-volatile memory that can be erased electrically at the block level and programmed Byte-by-Byte. It operates at a 5V ± 10% supply voltage and has a fast access time of 70ns. The programming time for each byte is 10µs, and the erase time for a block is 1.0 sec typical and for the chip is 2.5 sec typical. The M29F040 model has been replaced by the M29F040B. It features a program/erase controller (P/E.C.) that allows for byte-by-byte programming, as well as data polling and toggle bits protocol for P/E.C. status. The memory can be erased in blocks, with 8 uniform blocks of 64 KBytes each. Block protection and multiblock erase are also supported. The M29F0418-1SR has erase suspend and resume modes, low power consumption in read and standby modes, and is capable of 100,000 program/erase cycles per block. It has a data retention period of 20 years with defectivity below 1ppm/year. The electronic signature of the device includes a manufacturer code of 20h and a device code of E2h.

Specifications and features

• Non-volatile memory
• Block-level electric erase
• Byte-by-Byte programming
• 5V ± 10% supply voltage
• Fast access time: 70ns
• Byte programming time: 10µs typical
• Erase time: 1.0 sec typical (block), 2.5 sec typical (chip)
• Program/erase controller (P/E.C.) with data polling and toggle bits protocol for P/E.C. status
• Memory erase in blocks with 8 uniform blocks of 64 KBytes each
• Block protection and multiblock erase
• Erase suspend and resume modes
• Low power consumption: 8mA typical (read mode), 25µA typical (stand-by mode)
• Automatic stand-by mode
• 100,000 program/erase cycles per block
• 20 years data retention with defectivity below 1ppm/year
• Electronic signature with manufacturer code: 20h and device code: E2h

Application Scenarios

The Electronic Component Model: 29F0418-1SR is commonly used in applications that require non-volatile memory with block-level erase capability. It is suitable for use in various electronic devices such as computers, mobile phones, automotive electronics, industrial control systems, and more.

Comparison

• Fast access time
• Block-level erase capability
• Byte-by-Byte programming
• Low power consumption
• Long data retention period

• Relatively long erase time
• Requires supply voltage of 5V ± 10%