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Description
RF3235TR13 is an N-Channel enhancement mode silicon gate power field effect transistor that is designed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is widely used in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Specifications and features
- Product Category: IC Chips
- Current Rating: 2.8A and 3.3A
- Voltage Rating: 350V and 400V
- rDS(ON): 1.8 ohm and 2.5 ohm
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
Application Scenarios
RF3235TR13 can be operated directly from integrated circuits, making it suitable for various applications, including:
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
- Drivers for High Power Bipolar Switching Transistors Requiring High Speed and Low Gate Drive Power
Comparison
Advantages- Designed, Tested, and Guaranteed to Withstand a Specified Level of Energy in the Breakdown Avalanche Mode of Operation
- Can be Operated Directly from Integrated Circuits
- Nanosecond Switching Speeds
Disadvantages- None identified
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Similar parts: 3915 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
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Additional Information
- Datasheet: Download RF3235TR13
- Chipdatas Part: CD92-RF3235TR13
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/09/04 03:15 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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