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Description
The HGTG20N50E1D is an electronic component model in the category of IC chips. It is an IGBT (Insulated Gate Bipolar Transistor) which is a MOS gated high voltage switching device that combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The on-state voltage drop of this IGBT only varies moderately between +25°C and +150°C. It also includes an ultrafast diode with a soft recovery characteristic that is used in parallel with the IGBT, with a time for reverse recovery (tRR) of less than 60ns.
Specifications and features
- 20A current rating
- 500V voltage rating
- Latch-free operation
- Typical fall time of less than 500ns
- High input impedance
- Low conduction loss
- Includes an anti-parallel diode
- Ultrafast diode with a time for reverse recovery (tRR) of less than 60ns
Application Scenarios
The HGTG20N50E1D electronic component model is commonly used in various applications. Some of its possible application scenarios include:
- Power electronics
- Motor control
- Industrial equipment
- Renewable energy systems
- Uninterruptible power supplies
Comparison
Advantages- High input impedance
- Low conduction loss
- Ultrafast diode with soft recovery characteristic
- Wide temperature range of operation (+25°C to +150°C)
Disadvantages- No specific disadvantages identified
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Similar parts: 3915 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
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Popular parts of the same kind
- Datasheet: Download HGTG20N50E1D
- Chipdatas Part: CD90-HGTG20N50E1D
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 20:42 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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