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Product Details
Manufacturer
ROHM
Product Category
FETs - Single
Series
-
Packaging
Tube
Mounting-Style
Through Hole
Package-Case
4-DIP (0.300", 7.62mm)
Technology
Si
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Through Hole
Number-of-Channels
1 Channel
Supplier-Device-Package
4-DIP, Hexdip, HVMDIP
Configuration
Single Dual Drain
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1.3W
Transistor-Type
1 N-Channel
VDSS – Drain-Source Voltage
60V
Input Capacitance
400pF @ 25V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
1.7A (Ta)
Rds-On-Max-Id-Vgs
200 mOhm @ 1A, 5V
Vgs-th-Max-Id
2V @ 250μA
Gate-Charge-Qg-Vgs
8.4nC @ 5V
Pd-Power-Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
110 ns
Rise-Time
110 ns
Vgs-Gate-Source-Voltage
10 V
ID (drain current)
1.7 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
200 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
17 ns
Turn-On Delay Time
9.3 ns
Channel-Mode
Enhancement
IRLD014PBF - Brand New ROHM Field Effect Tube (MOSFET)
1+ USD 0.82022
10+ USD 0.81201
50+ USD 0.80381
100+ USD 0.77920
Quantity
Shipping Costs:
Free ShippingEstimated 15-30 business days via Registered Air Mail or othersSee details
Delivery:
Estimated between Wed, Feb 26 and Fri, Feb 28.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
Payments:
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Full Refund if you don't receive your order
Full or Partial Refund , If the item is not as described
One-month free return and one year warranty.
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