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Product Details
Manufacturer
IR
Product Category
FETs - Single
Series
HEXFET®
Packaging
Alternate Packaging
Unit-Weight
0.050717 oz
Mounting-Style
SMD/SMT
Package-Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Supplier-Device-Package
Micro3?/SOT-23
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1.25W
VDSS – Drain-Source Voltage
60V
Input Capacitance
290pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
2.7A (Ta)
Rds-On-Max-Id-Vgs
92 mOhm @ 2.7A, 10V
Vgs-th-Max-Id
2.5V @ 25μA
Gate-Charge-Qg-Vgs
2.5nC @ 4.5V
Pd-Power-Dissipation
1.25 W
Vgs-Gate-Source-Voltage
16 V
ID (drain current)
2.7 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
116 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
2.5 nC
IRLML0060TRPBF - Brand New IR Field Effect Tube (MOSFET)
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Estimated between Wed, Feb 26 and Fri, Feb 28.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
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