JANS1N5617 - Brand New Microsemi Diodes, Rectifiers - Single
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Description
This is a “fast recovery” rectifier diode series named JANS1N5617, which is military qualified to MIL-PRF-19500/429 and is perfect for high-reliability applications where a failure cannot be tolerated. It is widely used in general rectifier applications including bridges, half-bridges, catch diodes, etc. The device has a popular JEDEC registered 1N5615 to 1N5623 series. The hermetically sealed glass package is voidless, and the device features triple-layer passivation and internal “Category I” metallurgical bonds. It has a working peak reverse voltage that ranges from 200 to 1000 volts, and the JAN, JANTX, JANTXV, and JANS versions are available per MIL-PRF-19500/429. The device is also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US).
Specifications and features
- Popular JEDEC registered 1N5615 to 1N5623 series
- Voidless hermetically sealed glass package
- Triple-Layer Passivation
- Internal “Category I” Metallurgical bonds
- Working Peak Reverse Voltage 200 to 1000 Volts.
- JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/429
- Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US)
Application Scenarios
The JANS1N5617 rectifier diode series is ideal for military and other high-reliability applications, including general rectifier applications such as bridges, half-bridges, catch diodes, etc. The device has a high forward surge current capability, robust construction, low thermal resistance, and controlled avalanche with peak reverse power capability. Moreover, it is inherently radiation hard as described in Microsemi MicroNote 050.
Comparison
Advantages- Military qualified to MIL-PRF-19500/429
- Hermetically sealed with voidless-glass construction
- Triple-Layer Passivation for a robust construction and high forward surge current capability
- Working peak reverse voltages ranging from 200 to 1000 volts
- Controlled avalanche with peak reverse power capability
- Inherently radiation hard
Disadvantages- Not suitable for applications requiring a low forward voltage drop
- Not the most cost-effective option for non-critical applications
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Similar parts: 6341 , Click to view
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Datasheet
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Popular parts of the same kind
- Datasheet: Download JANS1N5617
- Chipdatas Part: CD91-JANS1N5617
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
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- Last Updated: 2024/06/13 20:24 +0800
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