Description

M/A-COM's MA4E1317 single, MA4E1318 anti parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flipchip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz.

Specifications and features

• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion

Application Scenarios

The MA4E2072M-1068T electronic component model is widely used in various applications, including:

• Single and double balanced mixers in PCN transceivers and radios
• Police radar detectors
• Automotive radar detectors

Comparison

- High device uniformity

- Extremely low parasitics

- Fully passivated with silicon nitride

- Scratch protection with polyimide layer

- Easy circuit insertion

- None mentioned