GC2011 - Brand New Texas Instruments Active Filters
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Description
Electronic Component Model: GC2011 is a 4Mx32 GDDR2 SDRAM, which is equivalent to 134,217,728 bits of hyper synchronous data rate Dynamic RAM. It is organized as 4 x 1,048,976 words by 32 bits. This component is fabricated with SAMSUNG's high-performance CMOS technology, making it suitable for a variety of high-performance memory system applications. With synchronous features and Data Strobe, it allows for extremely high performance of up to 4GB/s per chip. It operates with a power supply of 2.5V + 0.1V for device operation and 1.8V + 0.1V for the I/O interface. The component features On-Die Termination, Output Driver Strength adjustment by EMRS, and SSTL_18 compatible inputs/outputs. It has 4 banks for operation and supports MRS cycle with address key programs. The component has a maximum clock frequency of up to 500MHz and a maximum data rate of up to 1Gbps per pin. It also features DLL for Address, CMD, and outputs. The GC2011 comes in a 144 Ball FBGA package.
Specifications and features
- Power supply: 2.5V + 0.1V for device operation, 1.8V + 0.1V for I/O interface
- On-Die Termination for all inputs except CKE, ZQ
- Output Driver Strength adjustment by EMRS
- SSTL_18 compatible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs
- CAS latency: 5, 6, 7 (clock)
- Burst length: 4 only
- Burst type: sequential only
- Additive latency (AL): 0,1 (clock)
- Read latency (RL): CL+AL
- Write latency (WL): AL+1
- Differential Data Strobes for Data-in, Data out
- 4 DQS and /DQS (one differential strobe per byte)
- Single Data Strobes by EMRS
- Edge aligned data & data strobe output
- Center aligned data & data strobe input
- DM for write masking only
- Auto & Self refresh
- 32ms refresh period (4K cycle) (16ms is under consideration)
- Maximum clock frequency up to 500MHz
- Maximum data rate up to 1Gbps/pin
- DLL for Address, CMD and outputs
Application Scenarios
The GC2011 is ideal for a variety of high-performance memory system applications. Its high-speed performance, maximum clock frequency of up to 500MHz, and maximum data rate of up to 1Gbps per pin make it suitable for applications such as gaming consoles, graphics cards, and high-performance computing.
Comparison
Advantages- High-speed performance up to 4GB/s per chip
- Wide range of operating frequencies and programmable latencies
- Suitable for a variety of high-performance memory system applications
- Compatibility with SSTL_18 inputs/outputs
- Edge aligned data & data strobe output for efficient data transfer
Disadvantages- Refresh period of 32ms (4K cycle) may be slower compared to other models
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download GC2011
- Chipdatas Part: CD89-GC2011
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 02:23 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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