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Product Details
Manufacturer
Infineon
Product Category
FETs - Single
Series
HEXFET®
Packaging
Alternate Packaging
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
8-SO
Configuration
Single
FET-Type
MOSFET P-Channel, Metal Oxide
Power-Max
2.5W
Transistor-Type
1 P-Channel
VDSS – Drain-Source Voltage
30V
Input Capacitance
1680pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
12A (Tc)
Rds-On-Max-Id-Vgs
11.9 mOhm @ 12A, 10V
Vgs-th-Max-Id
2.4V @ 25μA
Gate-Charge-Qg-Vgs
52nC @ 10V
Pd-Power-Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
66 ns
Rise-Time
57 ns
Vgs-Gate-Source-Voltage
20 V
ID (drain current)
- 12 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1.8 V
Rds-On-Drain-Source-Resistance
16.1 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
80 ns
Turn-On Delay Time
19 ns
Qg-Gate-Charge
18 nC
Transconductance
20 S
IRF9328TRPBF - Brand New Infineon Field Effect Tube (MOSFET)
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Return:60 days returns. Buyer pays for return shipping.See details
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