Description

The Electronic Component Model MT46V16M16P-6T:F is a 256Mb DDR SDRAM, which is a high-speed CMOS, dynamic random-access memory. It contains 268,435,456 bits and is internally configured as a quad bank DRAM. It operates at a voltage of +2.5V ±0.2V.

Specifications and features

• Memory ICs
• 256Mb DDR SDRAM
• Quad bank DRAM
• Operating Voltage: +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/received with data
• Internal, pipelined double data rate (DDR) architecture
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• Data mask (DM) for masking write data
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• 2.5V I/O (SSTL_2 compatible)

Application Scenarios

The MT46V16M16P-6T:F can be used in various electronic devices such as computers, laptops, servers, and gaming consoles. It is suitable for applications that require high-speed and reliable data storage and retrieval.

Comparison

• High-speed data transfer
• Large memory capacity
• Quad bank configuration for concurrent operation
• Compatible with SSTL_2 interface

• Requires a voltage of +2.5V ±0.2V, which may not be compatible with all devices
• Not suitable for applications that require higher memory capacities