HGTP7N60A4D - Brand New onsemi IGBTs - Single
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Description
The HGTP7N60A4D is a MOS gated high voltage switching device that combines the best features of MOSFETs and bipolar transistors. It has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331, and the diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. It has been optimized for high frequency switch mode power supplies.
Specifications and features
- >100kHz Operation At 390V, 7A
- 200kHz Operation At 390V, 5A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125°C
- Low Conduction Loss
- Temperature Compensating SABER™ Model www.fairchildsemi.com
Application Scenarios
This HGTP7N60A4D IGBT is commonly used in high frequency switch mode power supplies, where low conduction losses and high voltage switching capabilities are required.
Comparison
Advantages- Combines the best features of MOSFETs and bipolar transistors
- High input impedance
- Low on-state conduction loss
- Optimized for high frequency switch mode power supplies
- Suitable for high voltage switching applications
Disadvantages- On-state voltage drop varies moderately with temperature
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Similar parts: 1036 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download HGTP7N60A4D
- Chipdatas Part: CD93-HGTP7N60A4D
- Warehouse: China, Hong Kong
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- Last Updated: 2024/06/13 05:17 +0800
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