Description

The S29GL512P10TFCR20F is a 1 Gigabit, 512 Megabit, 256 Megabit, and 128 Megabit 3.0 Volt-only Page Mode Flash Memory. It is fabricated using 90 nm MirrorBit Process Technology and is ideal for embedded applications that require higher density, better performance, and lower power consumption.

Specifications and features

- Single 3V read/program/erase (2.7-3.6 V)

- Enhanced VersatileI/O™ control

- 90 nm MirrorBit process technology

- 8-word/16-byte page read buffer

- 32-word/64-byte write buffer reduces overall programming time for multiple-word updates

- Secured Silicon Sector region

- Uniform 64 Kword/128 Kbyte Sector Architecture

- 100,000 erase cycles per sector typical

- 20-year data retention typical

- Offered Packages: 56-pin TSOP, 64-ball Fortified BGA

- Suspend and Resume commands for Program and Erase operations

- Write operation status bits indicate program and erase operation completion

- Unlock Bypass Program command to reduce programming time

- Support for CFI (Common Flash Interface)

- Persistent and Password methods of Advanced Sector Protection

- WP#/ACC input

- Hardware reset input (RESET#) resets device

- Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Application Scenarios

The S29GL512P10TFCR20F is suitable for a wide range of applications, including:

• Embedded systems
• Consumer electronics
• Automotive
• Telecommunications

Comparison

- Fast page access time and random access time
- Higher density
- Better performance
- Lower power consumption
- 20-year data retention
- Support for CFI (Common Flash Interface)
- Secure Silicon Sector region

- Limited storage capacity
- Higher cost compared to lower capacity models