Description

The MD2716M is a 64-Kbit ultraviolet erasable programmable read-only memory. It is organized as 8K words by 8 bits per word and operates from a single +5 V supply. This electronic component is available in windowed ceramic DIP packages as well as plastic one-time programmable (OTP) PDIP and PLCC packages. It features fast access time with a delay of 45 ns, low power consumption with a typical CMOS standby current of 20 µA, and a JEDEC-approved pinout. The MD2716M supports a single +5 V power supply with a ±10% power supply tolerance available. It also offers 100% Flashrite programming with a typical programming time of 1 second. The component is latch-up protected to 100 mA from –1 V to VCC+1 V, ensuring high noise immunity. It has versatile features for simple interfacing, including both CMOS and TTL input/output compatibility and two line control functions. The MD2716M is available in standard 28-pin DIP, PDIP, and 32-pin PLCC packages.

Specifications and features

• 64-Kbit ultraviolet erasable programmable read-only memory
• 8K words by 8 bits per word
• Single +5 V supply
• Fast access time of 45 ns
• Low power consumption with typical CMOS standby current of 20 µA
• JEDEC-approved pinout
• ±10% power supply tolerance available
• 100% Flashrite programming with typical programming time of 1 second
• Latch-up protected to 100 mA from –1 V to VCC+1 V
• High noise immunity
• Versatile features for simple interfacing
• Both CMOS and TTL input/output compatibility
• Two line control functions
• Available in standard 28-pin DIP, PDIP, and 32-pin PLCC packages

Application Scenarios

The MD2716M is commonly used in electronic devices that require non-volatile memory storage. It is ideal for applications that require fast access times, low power consumption, and high noise immunity. Some possible application scenarios include:

• Embedded systems
• Industrial control systems
• Communication devices
• Automotive electronics
• Medical equipment
• Consumer electronics

Comparison

- Fast access time of 45 ns

- Low power consumption with typical CMOS standby current of 20 µA

- Versatile features for simple interfacing

- High noise immunity

- Requires an ultraviolet eraser for memory erasure