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Description
Electronic Component Model: T302BV is an IC chip designed for parallel resonance inverter switching applications. It features FRD included between the emitter and collector and operates in enhancement mode. This high-speed IGBT has a typical turn-off time (tf) of 0.23 μs when the collector current (IC) is 40 A. The FRD has a typical reverse recovery time (trr) of 0.7 μs at a diode current rate (di/dt) of -20 A/μs. Additionally, it has a low saturation voltage (VCE (sat)) of 3.7 V (typ.) at a collector current (IC) of 40 A.
Specifications and Features
- FRD included between emitter and collector
- Enhancement mode
- High speed IGBT: tf= 0.23 μs (typ.) (IC= 40 A)
- FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs)
- Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC= 40 A)
Application Scenarios
This electronic component model is specifically designed for parallel resonance inverter switching applications. It can be used in various industries where high-speed switching and low saturation voltage are required.
Comparison
Advantages:
- FRD included between emitter and collector for improved performance
- Operates in enhancement mode
- High-speed IGBT with a low turn-off time
- FRD with a low reverse recovery time
- Low saturation voltage for efficient operation
Disadvantages:
None
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Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download T302BV
- Chipdatas Part: CD88-T302BV
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/13 23:49 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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