CY7C1512KV18-250BZI - Brand New Cypress Semiconductor Memory ICs
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Brand:Cypress Semiconductor
Category: Memory ICs
Chipdatas Part No.:CD93-CY7C1512KV18-250BZI
Manufacturer Part No.:CY7C1512KV18-250BZI
Datecode:09+
Package:165-LBGA
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Description
The CY7C1512KV18-250BZI is a 1.8V synchronous pipelined SRAM equipped with the QDR II architecture. It is part of the CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and CY7C1514KV18 series of memory ICs. The QDR II architecture includes separate read and write ports, allowing for concurrent transactions. It operates at a clock frequency of 350 MHz, providing high bandwidth. The device supports two-word burst on all accesses and features double data rate (DDR) interfaces on both read and write ports.
Specifications and features
- Separate independent read and write data ports
- Supports concurrent transactions
- 350 MHz clock for high bandwidth
- Two-word burst on all accesses
- Double data rate (DDR) interfaces on both read and write ports at 350 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Single multiplexed address input bus latches address inputs for both read and write ports
- Separate port selects for depth expansion
- Synchronous internally self-timed writes
- QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH
- Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
- Available in x8, x9, x18, and x36 configurations
- Full data coherency, providing the most current data
- Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4V to VDD
- Supports both 1.5 V and 1.8 V I/O supply
- Available in a 165-ball fine pitch ball grid array (FBGA) package (13 x 15 x 1.4 mm)
- Offered in both Pb-free and non Pb-free packages
- Variable drive HSTL output buffers
- JTAG 1149.1 compatible test access port
- Phase-Locked Loop (PLL) for Accurate Data Placement
Application Scenarios
The CY7C1512KV18-250BZI memory IC can be used in various electronic devices and systems that require high-speed data storage and retrieval. Some possible application scenarios include:
- Networking equipment
- Telecommunications systems
- Data centers
- High-performance computing
- Video processing systems
Comparison
Advantages- High-speed data access with a clock frequency of 350 MHz
- Concurrent read and write operations with separate data ports
- Double data rate (DDR) interfaces for efficient data transfer
- Support for both 1.5 V and 1.8 V I/O supply
- Flexible configuration options (x8, x9, x18, and x36)
- Full data coherency for reliable data retrieval
Disadvantages- Requires precise DDR timing with two input clocks
- Operates with 1.5 cycle read latency when DOFF is asserted HIGH
- Available in a limited package option (165-ball FBGA)
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Additional Information
- Datasheet: Download CY7C1512KV18-250BZI
- Chipdatas Part: CD93-CY7C1512KV18-250BZI
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/26 07:10 +0800
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