CY7C1618KV18-300BZXC - Brand New CYPRESS Pre-ordered Products
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Description
Electronic Component Model CY7C1618KV18-300BZXC is a 1.8-V synchronous pipelined SRAM with DDR II (double data rate II) architecture. It features a 144-Mbit density, 333 MHz clock, two-word burst, double data rate interfaces at 666 MHz, 1-bit burst counter and advanced synchronous peripheral circuitry. The burst counter bursts two 18-bit words in the case of CY7C1618KV18 and two 36-bit words in the case of CY7C1620KV18 sequentially into or out of the device. It is equipped with a JTAG 1149.1 compatible test access port and phase-locked loop (PLL) for accurate data placement.
Specifications and features
- 144-Mbit density (8M × 18, 4M × 36)
- 333 MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
- Two input clocks (K and K) for precise DDR timing
- SRAM uses rising edges only
- Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Synchronous internally self-timed writes
- DDR II operates with 1.5-cycle read latency when DOFF is asserted high
- Operates similar to DDR I device with one cycle read latency when DOFF is asserted low
- 1.8-V core power supply with high-speed transceiver logic (HSTL) inputs and outputs
- Variable drive HSTL output buffers
- Expanded HSTL output voltage (1.4 V–VDD)
- Supports both 1.5-V and 1.8-V I/O supply
- Available in 165-ball fine-pitch ball grid array (FBGA) package (15 × 17 × 1.4 mm)
- Offered in Pb-free packages
Application Scenarios
The CY7C1618KV18-300BZXC is mainly used in electronic devices where high-performance memory is required, such as enterprise storage systems, data center devices, networking equipment, switches, and routers.
Comparison
Advantages- High-density memory with DDR II architecture for high bandwidth and double data rate interfaces
- Two-word burst and synchronous internally self-timed writes for precise DDR timing
- Expanded HSTL output voltage (1.4 V–VDD) and supports both 1.5-V and 1.8-V I/O supply
Disadvantages- May not be cost-effective for low-end devices due to its high-performance features
- The 165-ball fine-pitch ball grid array (FBGA) package may not be readily compatible with all devices
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Similar parts: 15616 , Click to view
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
- - DHL Express: 3-7 business days
- - DHL eCommerce: 12-22 business days
- - FedEx International Priority: 3-7 business days
- - EMS: 10-15 business days
Shipping fee:
- - Automatic Email notification (above 5 times)
- - View in your order page
Shipping option:
DHL, FedEx, EMS, SF Express, and Registered Air MailShipping tracking:
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How to Buy:
- - In-stock, Add to cart > Check out > Submit order > Complete payment >Delivery.
- - Inquiry, Add to inquiry sheet/Submit bom/inquire file/Send email us > Quote > Place order > Complete payment >Delivery.
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Payment:
- - Paypal,Credit Card includes Visa, Master, American Express.
- - Wire transfer, include Local bank transfer.
- - Western Union.
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- Datasheet: Download CY7C1618KV18-300BZXC
- Chipdatas Part: CD78-CY7C1618KV18-300BZXC
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/20 16:11 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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The fee is charged according to the rule of PayPal.
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The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.
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We recommend to use bank transfer for large orders to save on handling fees.
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DHL(www.dhl.com)
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Registered Mail(www.singpost.com)
Free shipping without minimum order.