Description

Electronic Component Model: AF9412N

Product Category: IC Chips

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Specifications and features

• 56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V

• Low gate charge (typical 84 nC)

• Low Crss (typical 200 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Application Scenarios

These N-Channel enhancement mode power field effect transistors are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Comparison

No specific advantages and disadvantages were mentioned for this model.