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HBDM60V600W-7
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Product Details
Manufacturer
Diodes Incorporated
Product Category
Transistors (BJT) - Arrays
Series
HBDM60
Packaging
Alternate Packaging
Unit-Weight
0.000212 oz
Mounting-Style
SMD/SMT
Package-Case
6-TSSOP, SC-88, SOT-363
Mounting-Type
Surface Mount
Supplier-Device-Package
SOT-363
Configuration
Dual
Power-Max
200mW
Transistor-Type
NPN, PNP
Electric current collectors
500mA, 600mA
Voltage-Collector-Emitter-Breakdown-Max
65V, 60V
DC-Current-Gain-hFE-Min-Ic-Vce
100 @ 100mA, 1V / 100 @ 150mA, 10V
Vce saturation
400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current-Collector-Cutoff-Max
100nA
Frequency-Transition
100MHz
Pd-Power-Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Collector-Emitter-Voltage-VCEO-Max
- 60 V + 65 V
Transistor-Polarity
NPN PNP
Collector-Emitter-Saturation-Voltage
- 0.5 V
Collector-Base-Voltage-VCBO
- 60 V + 80 V
Emitter-Base-Voltage-VEBO
- 5.5 V 6 V
Maximum-DC-Collector-Current
0.5 A at NPN 0.6 A at PNP
Gain-Bandwidth-Product-fT
100 MHz
Continuous-Collector-Current
- 600 mA 500 mA
DC-Collector-Base-Gain-hfe-Min
50
DC-Current-Gain-hFE-Max
300
HBDM60V600W-7 - Brand New Diodes Incorporated Transistors (BJT) - Arrays
Manufacturer Part No.:HBDM60V600W-7
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Estimated between Wed, Apr 9 and Fri, Apr 11.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
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