Description

The K9F1208UOB-PIB0 is a NAND Flash Memory that offers a cost-effective solution for solid state mass storage. It has a memory cell array of 64M+2,048Kbit x 8bit and a data register of 512+16bit x 8bit multiplied by four planes. The K9F1208UOB-PIB0 features automatic program and erase functions, fast write cycle time, and reliable CMOS floating-gate technology. It is available in a 48-pin TSOP I package.

Specifications and features

• Voltage Supply: 2.7V~3.6V
• Memory Cell Array: (64M + 2,048K)bit x 8bit
• Data Register: (512 + 16)bit x 8bit multiplied by four planes
• Automatic Program and Erase
• Page Program: (512 + 16)Byte
• Block Erase: (16K + 512)Byte
• 528-Byte Page Read Operation
• Random Access: 12ms(Max.)
• Serial Page Access: 50ns(Min.)
• Fast Write Cycle Time
• Program time: 200ms(Typ.)
• Block Erase Time: 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Endurance: 100K Program/Erase Cycles
• Data Retention: 10 Years
• Command Register Operation
• Intelligent Copy-Back Operation
• Package: K9F1208U0M-YCB0, K9F1208U0M-YIB0 - 48-Pin TSOP I (12 x 20 / 0.5 mm pitch)
• Simultaneous Four Page/Block Program/Erase

Application Scenarios

The K9F1208UOB-PIB0 NAND Flash Memory is commonly used in the solid state mass storage market as a cost-effective solution. It is suitable for applications that require fast write cycle time, reliable data storage, and high endurance.

Comparison

• Cost-effective solution for solid state mass storage
• Fast write cycle time
• Reliable CMOS floating-gate technology
• High endurance with 100K program/erase cycles
• Data retention of 10 years

• Spare 2,048Kbit x 8bit may not be suitable for all applications