Description

The R1RP0416DGE-2PI is a high speed 4-Mbit static RAM that is organized as 1-Mword × 4-bit. Using CMOS process (6-transistor memory cell) and high speed circuit designing technology, it offers a high speed access time. The R1RP0416DGE-2PI is most suitable for applications that require high speed and high density memory, such as cache and buffer memory in systems. The R1RP0416DGE-2PI is packaged in 400-mil 32-pin SOJ for high density surface mounting.

Specifications and features

• Product Category: IC Chips
• Supply Voltage: Single 5.0 V
• Access Time: 12 ns (max)
• Memory Type: Static
• Clock or Timing Strobe: Not Required
• Input and Output Compatibility: Directly TTL Compatible
• Operating Current: 130 mA (max)
• Standby Current (TTL): 40 mA (max)
• Standby Current (CMOS): 5 mA (max) : 1.0 mA (max) (L-version)
• Data Retention Current: 0.5 mA (max) (L-version)
• Data Retention Voltage: 2.0 V (min) (L-version)
• Package Type: SOJ 32-pin (W)
• Mounting Style: Surface Mount

Application Scenarios

The R1RP0416DGE-2PI is most suitable for high speed and high density memory applications, such as cache and buffer memory in systems.

Comparison

• High speed access time
• High density memory storage capacity
• Directly compatible with TTL

• Requires a single 5.0 V supply voltage which may not be compatible for all applications