Description

The RF1211 is an N-Channel enhancement mode power field effect transistor (MOSFET) designed for use in various applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. It is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The MOSFET can be operated directly from integrated circuits, making it a versatile electronic component.

Specifications and features

• Product Category: IC Chips
• 8.0A and 9.2A, 80V and 100V
• rDS(ON) = 0.27Ω and 0.36Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

Related Literature:
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Application Scenarios

The RF1211 MOSFET is versatile and can be used in various electronics applications. It can be used in switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. This makes it a viable electronic component for any application that requires these features.

Comparison

• Linear transfer characteristics
• High input impedance
• Can be operated directly from integrated circuits

• rDS(ON) is relatively high
• SOA is power dissipation limited