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Description
M/A-COM's MA4E2200D1-287T is a gallium arsenide flipchip Schottky barrier diode. It is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during handling. The flip chip configuration allows for pick and place insertion. This diode has a high cutoff frequency, making it suitable for use through millimeter wave frequencies. It is commonly used in single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The MA4E2200D1-287T can be used through 80 GHz.
Specifications and features
• Low series resistance
• Low capacitance
• High cutoff frequency
• Silicon nitride passivation
• Polyimide scratch protection
• Designed for easy circuit insertionApplication Scenarios
Comparison
AdvantagesNoneDisadvantagesNone -
Similar parts: 430483 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download MA4E2200D1-287T
- Chipdatas Part: CD90-MA4E2200D1-287T
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/10/13 03:33 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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