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NTJD4152PT1G - Brand New ON Semiconductor FETs - Arrays - Datasheet - Chipdatas

NTJD4152PT1G - Brand New ON Semiconductor FETs - Arrays

In Stock:20739 ,Ready for Immediate Shipping
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In Stock: 20739, Ready for Immediate Shipping
Category:FETs - Arrays
Chipdatas Part No.:CD88-NTJD4152PT1G
Manufacturer Part No.:NTJD4152PT1G
Datecode:09+
Package:SOT-363
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  • Description

    NTJD4152PT1G is a small signal MOSFET designed for fast switching with low gate charge. It comes with a small footprint of 30% smaller than TSOP−6 and an ESD protected gate. This product is AEC Q101 qualified as NVTJD4001N, meaning it is suitable for use in automotive applications. Additionally, this device is Pb−Free and RoHS compliant, making it environmentally friendly.

    Specifications and features

    • Product Category: FETs - Arrays
    • Number of Channels: Dual N−Channel
    • Voltage - Rated: 30V
    • Current - Continuous Drain (Id) at 25°C: 250mA
    • Resistance - Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 250mA, 10V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
    • Power - Max: 360mW
    • Operating Temperature: -55°C to 150°C (TJ)
    • Mounting Type: Surface Mount

    Application Scenarios

    The NTJD4152PT1G is commonly used in the following applications:

    • Low Side Load Switch
    • Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
    • Buck Converters
    • Level Shifts

    Comparison

    Advantages
    • Low gate charge for fast switching
    • Small footprint - 30% smaller than TSOP−6
    • ESD protected gate for added safety and reliability
    • AEC Q101 qualified for use in automotive applications
    • Pb−Free and RoHS compliant, making it environmentally friendly
    Disadvantages
    • Not suitable for high voltage and high current applications due to its limited voltage and current ratings
  • Similar parts: 1972 , Click to view
    Attributes Value
    Category FETs - Arrays
    Manufacturer ON Semiconductor
    Product Category FETs - Arrays
    Series NTJD4152P
    Packaging Alternate Packaging
    Unit-Weight 0.000265 oz
    Mounting-Style SMD/SMT
    Package-Case 6-TSSOP, SC-88, SOT-363
    Technology Si
    Operating-Temperature -55°C ~ 150°C (TJ)
    Mounting-Type Surface Mount
    Number-of-Channels 2 Channel
    Supplier-Device-Package SC-88/SC70-6/SOT-363
    Configuration Dual
    FET-Type 2 P-Channel (Dual)
    Power-Max 272mW
    Transistor-Type 2 P-Channel
    VDSS – Drain-Source Voltage 20V
    Input Capacitance 155pF @ 20V
    FET-Feature Logic Level Gate
    Current-Continuous-Drain-Id-25°C 880mA
    Rds-On-Max-Id-Vgs 260 mOhm @ 880mA, 4.5V
    Vgs-th-Max-Id 450mV @ 250μA
    Gate-Charge-Qg-Vgs 2.2nC @ 4.5V
    Pd-Power-Dissipation 272 mW
    Maximum Operating Temperature + 150 C
    Operating temperature range - 55 C
    Fall-Time 6.5 ns
    Rise-Time 6.5 ns
    Vgs-Gate-Source-Voltage 12 V
    ID (drain current) - 880 mA
    Vds-Drain-Source-Breakdown-Voltage - 20 V
    Rds-On-Drain-Source-Resistance 600 mOhms
    Transistor-Polarity P-Channel
    Typical-Turn-Off-Delay-Time 13.5 ns
    Turn-On Delay Time 5.8 ns
    Transconductance 3 S
    Channel-Mode Enhancement
  • Latest 5 Reviews
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
    Returning:
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Additional Information
  • Datasheet: Download NTJD4152PT1G
  • Chipdatas Part: CD88-NTJD4152PT1G
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/05/21 16:10 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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