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GENERAL DESCRIPTION
The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates.
FEATURES
• Fabricated on Honeywell’s Radiation Hardened
– 0.65 µmLeff RICMOS™ IV SOI Process, HX2000
– 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r
• Array Sizes from 40K to 390K Available Gates (Raw)
• HX2000 Supports 5V Core Operation
• HX2000r Supports 3.3V Core Operation
• HX2000r Supports Mixed Voltage I/O Buffers
• TTL (5V) or CMOS (5V/3.3V) Compatible I/O
• Configurable Multi-Port Gate Array SRAM
• Single or Dual Port Custom SRAM Drop-In Capability
• Supports Chip Level Power Down for Cold Sparing
• Supports System Speeds Beyond 100 MHz
• Total Dose Hardness ≥1x106 rad(SiO2)
• Dose Rate Upset Hardness:
≥1x1010 rad(Si)/sec, HX2000
≥1x109 rad(Si)/sec, HX2000rOption Available for:
≥1x1011 rad(Si)/sec, HX2000
≥1x1010 rad(Si)/sec, HX2000r
• Dose Rate Survivability ≥1x1012 rad(Si)/sec*
• Soft Error Rate
≤1x10-11 Errors/Bit/Day, HX2000
≤1x10-10 Errors/Bit/Day, HX2000r
• Neutron Fluence Hardness to 1x1014/cm2
• No Latchup -
Similar parts: 430483 , Click to view
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Datasheet
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Popular parts of the same kind
- Datasheet: Download HX2001-FB
- Chipdatas Part: CD94-HX2001-FB
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 10:43 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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