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Description
The RK2601C is a second-generation hardened power MOSFET designed by Intersil. It is available in both N and P channel enhancement types, with voltage ratings ranging from 100V to 500V and current ratings from 1A to 60A. The on-resistance of this MOSFET is as low as 25mΩ. It offers a total dose hardness of 100K RAD(Si) and 1000KRAD(Si) and neutron hardness ranging from 1E13n/cm2 to 1E14n/cm2. The gamma dose rate hardness is up to 1E9 without current limiting and 2E12 with current limiting.
Specifications and features
- 46A, 200V, RDS(on) = 0.070Ω
- Second Generation Rad Hard MOSFET Results From New Design Concepts
- Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- Photo Current - 18.0nA Per-RAD(Si)/sec Typically
- Neutron
- Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Application Scenarios
NoneComparison
NoneAdvantagesNoneDisadvantagesNone -
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- - DHL eCommerce: 12-22 business days
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- - EMS: 10-15 business days
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Additional Information
- Datasheet: Download RK2601C
- Chipdatas Part: CD94-RK2601C
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/24 03:32 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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