Description

The CY7C199-12ZC is a high-performance CMOS static RAM that is suitable for applications that require high speed and low power consumption. It has a memory capacity of 32,768 words by 8 bits, and it supports easy memory expansion through an active LOW Chip Enable (CE) and active LOW Output Enable (OE) with three-state drivers. It also has an automatic power-down feature that reduces power consumption by 81% when it is deselected. The CY7C199-12ZC comes in the standard 300-mil-wide DIP, SOJ, and LCC packages, making it easy to integrate into most electronic designs.

Specifications and features

• Memory Type: CMOS static RAM
• Memory Capacity: 32,768 words by 8 bits
• Memory Organization: 4K x 8
• Data Retention: 2V ("L" version only)
• Access Time: 10 ns
• Power Supply Voltage: 5V
• Power Consumption: 467 mW (max, 12 ns "L" version), 0.275 mW (max, "L" version) standby power
• Package Type: DIP, SOJ, LCC
• Interface Type: Parallel

Application Scenarios

The CY7C199-12ZC is suitable for a wide range of applications that require high-speed and low-power memory, including:

• Consumer electronics
• Industrial equipment
• Medical devices
• Automotive electronics
• Aerospace and defense systems

Comparison

• High-speed access time of 10 ns
• Low power consumption with automatic power-down feature
• Easy memory expansion with CE and OE features
• Supports 2V data retention in "L" version

• Only available in parallel interface
• Not suitable for applications that require larger memory capacity