NTHC5513T1G
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Product Details
Manufacturer
onsemi
Product Category
FETs - Arrays
Series
NTHC5513
Packaging
Alternate Packaging
Unit-Weight
0.002998 oz
Mounting-Style
SMD/SMT
Package-Case
8-SMD, Flat Lead
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
ChipFET?
Configuration
N-Channel P-Channel
FET-Type
N and P-Channel
Power-Max
1.1W
Transistor-Type
1 N-Channel 1 P-Channel
VDSS – Drain-Source Voltage
20V
Input Capacitance
180pF @ 10V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
2.9A, 2.2A
Rds-On-Max-Id-Vgs
80 mOhm @ 2.9A, 4.5V
Vgs-th-Max-Id
1.2V @ 250μA
Gate-Charge-Qg-Vgs
4nC @ 4.5V
Pd-Power-Dissipation
1.1 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Fall-Time
3 ns 27 ns
Rise-Time
9 ns 13 ns
Vgs-Gate-Source-Voltage
12 V
ID (drain current)
3.9 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistance
80 mOhms 155 mOhms
Transistor-Polarity
N-Channel P-Channel
Typical-Turn-Off-Delay-Time
10 ns 33 ns
Turn-On Delay Time
5 ns 7 ns
Transconductance
6 S
Channel-Mode
Enhancement
NTHC5513T1G - Brand New onsemi FETs - Arrays
Brand:onsemi
Category:FETs - Arrays
Manufacturer Part No.:NTHC5513T1G
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Estimated between Wed, Feb 26 and Fri, Feb 28.This item requires 2-5 business days for processing before shipping after payment is confirmed. And depending on the destination and shipping method.See details
Return:60 days returns. Buyer pays for return shipping.See details
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