MT48LC16M16A2TG-7EL:D - Brand New Micron Technology Inc. Memory
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General Description
The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks is organized as 8,192 rows by 2,048 columns by 4 bits. Each of the x8’s 67,108,864-bit banks is organized as 8,192 rows by 1,024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits.
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive edge of system clock
• Internal pipelined operation; column address can be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge, and auto refresh modes
• Self refresh mode
• 64ms, 8,192-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply -
Similar parts: 9920 , Click to view
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Datasheet
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Shopping guide
Delivery period:
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Popular parts of the same kind
- Datasheet: Download MT48LC16M16A2TG-7EL:D
- Chipdatas Part: CD94-MT48LC16M16A2TG-7EL:D
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/05/21 04:19 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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