BLF6G38-50,112 - Brand New NXP Semiconductors RF FETs
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General description
50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Features
■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a
drain efficiency of 23 % and a peak output power of 70 W:
■ Qualified up to a maximum VDS operation of 32 V
■ Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation
■ Internally matched for ease of use
■ Low gold plating thickness on leads
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)Applications
■ RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range -
Similar parts: 800 , Click to view
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Datasheet
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Shopping guide
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Popular parts of the same kind
- Datasheet: Download BLF6G38-50,112
- Chipdatas Part: CD93-BLF6G38-50,112
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 08:44 +0800
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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