HY57V658020BTC-10P - Brand New HY IC Chips
In Stock:1290 ,Ready for Immediate Shipping
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In Stock:
1290,
Ready for Immediate Shipping
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Description
The Hynix HY57V658020BTC-10P is a 67,108,864-bit CMOS Synchronous DRAM, suitable for main memory applications that require high memory density and bandwidth. It is organized as 4 banks of 2,097,152x8 and offers fully synchronous operation. The data paths are internally pipelined to achieve high bandwidth, and all input and output voltage levels are compatible with LVTTL.
Specifications and features
- Single 3.3±0.3V power supply
- All device pins are compatible with LVTTL interface
- JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch
- Data mask function by DQM
- Internal four banks operation
- Auto refresh and self refresh
- 4096 refresh cycles / 64ms
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
- Programmable CAS Latency; 2, 3 Clocks
Application Scenarios
The Hynix HY57V658020BTC-10P can be used in various applications such as:
- Main memory for high-performance computing systems
- Embedded systems requiring large memory density
- Data storage systems
Comparison
Advantages- High memory density
- High bandwidth
- Compatible with LVTTL interface
- Programmable options for burst length and burst type
- Auto refresh and self refresh capabilities
Disadvantages- Requires a 3.3V power supply
- Specific JEDEC standard package
- Limited options for CAS latency
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Datasheet
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Shopping guide
Delivery period:
- - Will ship out in 2-3 days
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- - EMS: 10-15 business days
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Additional Information
- Datasheet: Download HY57V658020BTC-10P
- Chipdatas Part: CD94-HY57V658020BTC-10P
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/06/03 08:59 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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