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Product Details
Manufacturer
Infineon
Product Category
FETs - Arrays
Series
HEXFET®
Packaging
Alternate Packaging
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Single
FET-Type
2 N-Channel (Dual)
Power-Max
2W
Transistor-Type
2 N-Channel
VDSS – Drain-Source Voltage
20V
Input Capacitance
960pF @ 10V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
10A
Rds-On-Max-Id-Vgs
13.4 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.55V @ 250μA
Gate-Charge-Qg-Vgs
11nC @ 4.5V
Pd-Power-Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Fall-Time
4.1 ns
Rise-Time
10 ns
ID (drain current)
10 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
2.55 V
Rds-On-Drain-Source-Resistance
13.4 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
11 nC
Transconductance
24 S
IRF8910GTRPBF - Brand New Infineon FETs - Arrays
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