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Product Details
Manufacturer
Diodes Incorporated
Product Category
Transistors (BJT) - Single
Series
2DB16
Packaging
Alternate Packaging
Mounting-Style
SMD/SMT
Package-Case
TO-243AA
Mounting-Type
Surface Mount
Supplier-Device-Package
SOT-89-3
Configuration
Single
Power-Max
900mW
Transistor-Type
PNP
Electric current collectors
2A
Voltage-Collector-Emitter-Breakdown-Max
12V
DC-Current-Gain-hFE-Min-Ic-Vce
270 @ 200mA, 2V
Vce saturation
180mV @ 50mA, 1A
Current-Collector-Cutoff-Max
100nA (ICBO)
Frequency-Transition
140MHz
Pd-Power-Dissipation
0.9 W
Maximum Operating Temperature
+ 150 C
Operating temperature range
- 55 C
Collector-Emitter-Voltage-VCEO-Max
- 12 V
Transistor-Polarity
PNP
Collector-Emitter-Saturation-Voltage
- 65 mV
Collector-Base-Voltage-VCBO
- 15 V
Emitter-Base-Voltage-VEBO
- 6 V
Maximum-DC-Collector-Current
- 4 A
Gain-Bandwidth-Product-fT
140 MHz
Continuous-Collector-Current
- 2 A
DC-Collector-Base-Gain-hfe-Min
270
DC-Current-Gain-hFE-Max
680
2DB1697-13 - Brand New Diodes Incorporated Transistors (BJT) - Single
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Return:60 days returns. Buyer pays for return shipping.See details
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