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Description
The M12L16161A is a high data rate synchronous Dynamic RAM (DRAM) with a capacity of 16,777,216 bits. It is organized as 2 x 524,288 words by 16 bits, and is fabricated using high-performance CMOS technology. The synchronous design allows for precise cycle control, enabling I/O transactions on every clock cycle. This device is versatile and can be used in a variety of high bandwidth, high-performance memory system applications.
Specifications and Features
- JEDEC standard 3.3V power supply
- LVTTL compatible with multiplexed address
- Dual banks operation
- MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
- All inputs are sampled at the positive going edge of the system clock
- Burst Read Single-bit Write operation
- DQM for masking
- Auto & self-refresh
- 32ms refresh period (2K cycle)
Application Scenarios
The M12L16161A is suitable for a wide range of high bandwidth, high-performance memory system applications. Some examples include:
- Server memory
- Graphics processing
- Networking infrastructure
- Video game consoles
Comparison
Advantages- High data rate synchronous operation
- Versatile and can be used in various memory system applications
- Precise cycle control with system clock
Disadvantages- Requires a JEDEC standard 3.3V power supply
- Higher cost compared to other memory modules
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Similar parts: 3915 , Click to view
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Datasheet
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Shopping guide
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Additional Information
- Datasheet: Download M12L16161A-55
- Chipdatas Part: CD94-M12L16161A-55
- Warehouse: China, Hong Kong
- Dispatch: Within 24 hours
- Free Shipping: Yes
- Prority Shipping: Yes, 3-5 days
- Last Updated: 2024/07/01 00:16 +0800
Refund
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- Full Refund if you don't receive your order
- Full or Partial Refund , If the item is not as described
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