Description

The TEESVB1D475K8R is an electronic component model in the IC Chips product category. This model is a 2 Mbit, 3.0 volt-only Flash memory that is designed to be programmed in-system. It requires a single 3.0 volt VCC supply and does not require a VPP for write or erase operations. The TEESVB1D475K8R is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages.

Specifications and features

- Memory capacity: 2 Mbit
- Power supply: 3.0 volt-only
- Programming method: In-system programming
- Packages: 44-pin SO, 48-pin TSOP, 48-ball FBGA
- Sector architecture: Flexible sector architecture with various sector sizes
- Erase cycle guarantee: Minimum 1 million erase cycles per sector
- Data retention: 20-year data retention at 125°C
- Compatibility: JEDEC standards compatible
- Additional features: Hardware reset pin, erase suspend/resume, unlock bypass program command

Application Scenarios

The TEESVB1D475K8R is suitable for various applications that require a 2 Mbit Flash memory with a 3.0 volt power supply. It can be used in battery-powered devices due to its low power consumption. The flexible sector architecture allows for efficient data organization, and the compatibility with JEDEC standards ensures easy integration into existing systems.

Comparison

- Single power supply operation for convenience
- Compatible with 0.5 µm Am29LV200 device
- High performance with fast access times
- Ultra low power consumption for energy efficiency
- Flexible sector architecture for efficient data organization
- Reliability with 20-year data retention
- JEDEC standards compatibility for easy integration

- Limited available package options
- Requires additional programming equipment for sector protection features