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MRFE6S9205HR3 - Brand New Freescale / NXP RF FETs - Datasheet - Chipdatas

MRFE6S9205HR3 - Brand New Freescale / NXP RF FETs

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In Stock: 9291, Ready for Immediate Shipping
Category:RF FETs
Chipdatas Part No.:CD90-MRFE6S9205HR3
Manufacturer Part No.:MRFE6S9205HR3
Datecode:09+
Package:NI-880
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  • Product Details

    __

    880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

    Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

    **• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

    IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.**

    Power Gain — 22.1 dB
    Drain Efficiency — 32%
    ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth
    • Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

    GSM EDGE Application

    • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (920-960 MHz)
    Power Gain — 20 dB
    Drain Efficiency — 46%
    Spectral Regrowth @ 400 kHz Offset = -62 dBc
    Spectral Regrowth @ 600 kHz Offset = -78 dBc
    EVM — 1.5% rms

    GSM Application

    • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (920-960 MHz)
    Power Gain — 20 dB
    Drain Efficiency — 68%

    Features

    • Characterized with Series Equivalent Large-Signal Impedance Parameters
    • Integrated ESD Protection
    • 225°C Capable Plastic Package
    • RoHS Compliant
    • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

  • Similar parts: 800 , Click to view
    Attributes Value
    Category RF FETs
    Manufacturer NXP USA Inc.
    Product Category RF FETs
    Categories Transistors - FETs, MOSFETs - RF
    Series -
    Packaging Tape & Reel (TR)
    Part-Status Obsolete
    Transistor-Type LDMOS
    Frequency 880MHz
    Gain 21.2dB
    Voltage-Test 28V
    Current-Rating -
    Noise-Figure -
    Current-Test 1.4A
    Power-Output 58W
    Voltage-Rated 66V
    Package-Case NI-880
    Supplier-Device-Package NI-880
    Base-Part-Number MRFE6S9205
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  • Shopping guide

    Warranty:
    • - 30-day money-back return policy,
    • - 90-day warranty against any manufacturing defects. View more
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    Within 30 days from date of shipment. View more

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    • - EMS: 10-15 business days
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Additional Information
  • Datasheet: Download MRFE6S9205HR3
  • Chipdatas Part: CD90-MRFE6S9205HR3
  • Warehouse: China, Hong Kong
  • Dispatch: Within 24 hours
  • Free Shipping: Yes
  • Prority Shipping: Yes, 3-5 days
  • Last Updated: 2024/07/01 08:18 +0800
Refund
    • Full Refund if you don't receive your order
    • Full or Partial Refund , If the item is not as described
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